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Manufacturer | STMicroelectronics |
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Manufacturer's Part Number | STF2N80K5 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Case Connection: ISOLATED; JEDEC-95 Code: TO-220AB; |
Datasheet | STF2N80K5 Datasheet |
In Stock | 1,320 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 2 A |
Maximum Pulsed Drain Current (IDM): | 8 A |
Surface Mount: | NO |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 20 W |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Maximum Drain-Source On Resistance: | 4.5 ohm |
Avalanche Energy Rating (EAS): | 60.5 mJ |
JEDEC-95 Code: | TO-220AB |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 800 V |
Maximum Drain Current (Abs) (ID): | 2 A |
Peak Reflow Temperature (C): | NOT SPECIFIED |