STMicroelectronics - STFI15N65M5

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STFI15N65M5 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STFI15N65M5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 44 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSIP-T3;
Datasheet STFI15N65M5 Datasheet
In Stock2,612
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11 A
Maximum Pulsed Drain Current (IDM): 44 A
Surface Mount: NO
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .34 ohm
Avalanche Energy Rating (EAS): 160 mJ
Other Names: 497-13161
-497-13161
JEDEC-95 Code: TO-281
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 650 V
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
2,612 $0.948 $2,476.176

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