STMicroelectronics - STFW45N65M5

STFW45N65M5 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STFW45N65M5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 650 V; Maximum Pulsed Drain Current (IDM): 140 A; No. of Terminals: 3;
Datasheet STFW45N65M5 Datasheet
In Stock327
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 810 mJ
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 35 A
Maximum Pulsed Drain Current (IDM): 140 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 650 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .078 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
327 $5.700 $1,863.900

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