STMicroelectronics - STFW60N65M5

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STFW60N65M5 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STFW60N65M5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;
Datasheet STFW60N65M5 Datasheet
In Stock1,694
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 46 A
Maximum Pulsed Drain Current (IDM): 184 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 63 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .059 ohm
Avalanche Energy Rating (EAS): 1400 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 650 V
Additional Features: ULTRA-LOW RESISTANCE
Maximum Drain Current (Abs) (ID): 46 A
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