STMicroelectronics - STGB10NC60KD

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STGB10NC60KD by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGB10NC60KD
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel;
Datasheet STGB10NC60KD Datasheet
In Stock560
NAME DESCRIPTION
Maximum Collector Current (IC): 20 A
Maximum Power Dissipation (Abs): 60 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Threshold Voltage: 7 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
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