STMicroelectronics - STGB14NC60KT4

STGB14NC60KT4 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGB14NC60KT4
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 25 A; Nominal Turn Off Time (toff): 340 ns;
Datasheet STGB14NC60KT4 Datasheet
In Stock2,465
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 25 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
Nominal Turn Off Time (toff): 340 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 80 W
Terminal Position: DUAL
Nominal Turn On Time (ton): 31.5 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
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