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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | STGB35N35LZT4 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 176 W; Maximum Collector Current (IC): 40 A; Package Style (Meter): SMALL OUTLINE; |
| Datasheet | STGB35N35LZT4 Datasheet |
| In Stock | 4,745 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 40 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 2.3 V |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| Nominal Turn Off Time (toff): | 37000 ns |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 176 W |
| Terminal Position: | DUAL |
| Nominal Turn On Time (ton): | 7600 ns |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | COLLECTOR |
| Moisture Sensitivity Level (MSL): | 1 |
| JEDEC-95 Code: | TO-263AA |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 380 V |
| Additional Features: | VOLTAGE CLAMPING |
| Maximum Gate-Emitter Voltage: | 12 V |
| Peak Reflow Temperature (C): | 245 |
