STMicroelectronics - STGB7NC60KDT4

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STGB7NC60KDT4 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGB7NC60KDT4
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 25 A; Maximum Operating Temperature: 150 Cel;
Datasheet STGB7NC60KDT4 Datasheet
In Stock2,253
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 25 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage: 7 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 80 W
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
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