STMicroelectronics - STGD10HF60KD

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STGD10HF60KD by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGD10HF60KD
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Maximum Collector Current (IC): 18 A; Terminal Finish: Matte Tin (Sn) - annealed; Peak Reflow Temperature (C): 260;
Datasheet STGD10HF60KD Datasheet
In Stock3,388
NAME DESCRIPTION
Maximum Collector Current (IC): 18 A
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 62.5 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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