STMicroelectronics - STGD25N36LZAG

  1. Home
  2. STMicroelectronics - STGD25N36LZAG
STGD25N36LZAG by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STGD25N36LZAG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 25 A; Maximum Collector-Emitter Voltage: 385 V;
Datasheet STGD25N36LZAG Datasheet
In Stock2,031
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 25 A
Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: AUTOMOTIVE IGNITION
Maximum Gate-Emitter Threshold Voltage: 2.1 V
Surface Mount: YES
Nominal Turn Off Time (toff): 14500 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 150 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 4560 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 385 V
Maximum Gate-Emitter Voltage: 16 V
Reference Standard: AEC-Q101
Maximum VCEsat: 1.25 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,031 $0.702 $1,425.762

Popular Products

Category Top Products

STGWA50IH65DF by STMicroelectronics

STGWA50IH65DF

STMicroelectronics

STGWA50IH65DF by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2V and a max collector-emitter voltage of 650V. It is commonly used in applications requiring high power dissipation, such as industrial motor drives and power supplies.
IRG4BC40UPBF by International Rectifier

IRG4BC40UPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; No. of Elements: 1;
IRGP4266DPBF by Infineon Technologies

IRGP4266DPBF

Infineon Technologies

Infineon's IRGP4266DPBF is an N-CHANNEL IGBT with tr of 90ns and tf of 80ns. It boasts a max power dissipation of 455W, ideal for high-power applications. With Vce(max) at 650V and Ic(max) at 140A, it's suitable for industrial motor drives and renewable energy systems.
IRGPS40B120UPBF by Infineon Technologies

IRGPS40B120UPBF

Infineon Technologies

IRGPS40B120UPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 80A. It is commonly used in motor control applications due to its fast nominal turn on time of 115ns and nominal turn off time of 357ns.
FF1200R17KP4B2NOSA2 by Infineon Technologies

FF1200R17KP4B2NOSA2

Infineon Technologies

Infineon Technologies' FF1200R17KP4B2NOSA2 is a N-CHANNEL IGBT with 1700V VCE, 1700A IC, and 2380ns toff. Ideal for power control applications due to its separate configuration with built-in diode elements. Rectangular package style with flange mount and isolated case connection.
STGD6NC60HDT4 by STMicroelectronics

STGD6NC60HDT4

STMicroelectronics

STGD6NC60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its fast turn-off time of 222ns and built-in diode configuration.
FZ600R65KE3NOSA1 by Infineon Technologies

FZ600R65KE3NOSA1

Infineon Technologies

FZ600R65KE3NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6500V max collector-emitter voltage. It has a complex configuration, 3 elements, and 1200ns nominal turn on time. Ideal for power control applications due to its isolated case connection and flange mount package style.
IXXH50N60B3D1 by IXYS Corporation

IXXH50N60B3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 120 A; Nominal Turn On Time (ton): 75 ns;
APTGT75A60T1G by Microsemi

APTGT75A60T1G

Microsemi

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 100 A; Terminal Finish: TIN SILVER COPPER;
IRG4PC50WPBF by International Rectifier

IRG4PC50WPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 55 A; JESD-30 Code: R-PSFM-T3;
APT45GP120J by Microchip Technology

APT45GP120J

Microchip Technology

APT45GP120J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 329W. It has a nominal turn-off time of 230ns and is suitable for power control applications. The transistor comes in a rectangular package style with flange mount, making it ideal for high-power electronic systems.
FGH40T120SMD by Fairchild Semiconductor

FGH40T120SMD

Fairchild Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 555 W; Maximum Collector Current (IC): 80 A; Terminal Finish: MATTE TIN; Maximum Gate-Emitter Threshold Voltage: 7.5 V;
IXGH30N120B3D1 by IXYS Corporation

IXGH30N120B3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 30 A; Maximum VCEsat: 3.5 V;
SKM195GB066D by Semikron International

SKM195GB066D

Semikron International

SKM195GB066D by Semikron International is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 1.9V and can handle a Max Collector Current of 265A. Ideal for POWER CONTROL applications, it operates at up to 175°C and features a Nominal Turn Off Time of 569ns.
IRG4PC50F-EPBF by International Rectifier

IRG4PC50F-EPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; No. of Terminals: 3;
APT100GN60LDQ4G by Microchip Technology

APT100GN60LDQ4G

Microchip Technology

Microchip Technology's APT100GN60LDQ4G is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 229A max collector current. Ideal for power control applications, it features a built-in diode, 96ns turn-on time, and 435ns turn-off time. Suitable for high-power systems requiring up to 625W dissipation in a flange mount package.
IXGH10N170A by Littelfuse

IXGH10N170A

Littelfuse

IXGH10N170A by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 10A max collector current, and 240ns nominal turn off time. Ideal for motor control applications due to its single configuration and through-hole terminal form.
IKW20N60TFKSA1 by Infineon Technologies

IKW20N60TFKSA1

Infineon Technologies

IKW20N60TFKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a turn-off time of 299ns and turn-on time of 36ns, suitable for high-power switching in various industries.
IRG4PC50UD-EPBF by International Rectifier

IRG4PC50UD-EPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Nominal Turn Off Time (toff): 370 ns; Case Connection: COLLECTOR;
BSM150GT120DN2 by Infineon Technologies

BSM150GT120DN2

Infineon Technologies

Infineon's BSM150GT120DN2 IGBT offers 1200V VCE, 200A IC, and 1250W power dissipation. Ideal for high-power applications requiring low VCEsat of 3V. Operates up to 150°C making it suitable for industrial and automotive sectors.