STMicroelectronics - STGD3NB60SD-1

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STGD3NB60SD-1 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGD3NB60SD-1
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Maximum Collector Current (IC): 3 A; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet STGD3NB60SD-1 Datasheet
In Stock3,176
NAME DESCRIPTION
Maximum Collector Current (IC): 3 A
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Gate-Emitter Threshold Voltage: 4.5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 48 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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