STMicroelectronics - STGDL6NC60DIT4

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STGDL6NC60DIT4 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGDL6NC60DIT4
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 13 A; Maximum Operating Temperature: 150 Cel;
Datasheet STGDL6NC60DIT4 Datasheet
In Stock1,642
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 13 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5.75 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: YES
Nominal Turn Off Time (toff): 122 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 50 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 10.5 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
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