STGF35HF60W by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STGF35HF60W
Description	N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 19 A; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Threshold Voltage: 5.75 V;
Datasheet	STGF35HF60W Datasheet
In Stock	2,362

NAME	DESCRIPTION
Maximum Collector Current (IC):	19 A
Maximum Power Dissipation (Abs):	40 W
Maximum Collector-Emitter Voltage:	600 V
Maximum Gate-Emitter Threshold Voltage:	5.75 V
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,362	$3.800	$8,975.600

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;