STMicroelectronics - STGF8NC60KD

STGF8NC60KD by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGF8NC60KD
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 24 W; Maximum Collector Current (IC): 7 A; Package Style (Meter): FLANGE MOUNT;
Datasheet STGF8NC60KD Datasheet
In Stock2,006
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 7 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 242 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 24 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 23 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
2,006 $2.100 $4,212.600

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