STMicroelectronics - STGW15H120DF2

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STGW15H120DF2 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGW15H120DF2
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 259 W; Maximum Collector Current (IC): 30 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet STGW15H120DF2 Datasheet
In Stock1,557
NAME DESCRIPTION
Maximum Collector Current (IC): 30 A
Maximum Power Dissipation (Abs): 259 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage: 7 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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Pricing (USD)

Qty. Unit Price Ext. Price
1,557 $3.100 $4,826.700

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