STMicroelectronics - STGW30N90D

STGW30N90D by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGW30N90D
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 60 A; JEDEC-95 Code: TO-247;
Datasheet STGW30N90D Datasheet
In Stock2,154
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 60 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5.75 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 928 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 220 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 41 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 900 V
Maximum Gate-Emitter Voltage: 25 V
Peak Reflow Temperature (C): NOT SPECIFIED
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