STGW60H65DF by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STGW60H65DF
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 360 W; Maximum Collector Current (IC): 120 A; Nominal Turn On Time (ton): 113 ns;
Datasheet	STGW60H65DF Datasheet
In Stock	2,497

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	120 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
JEDEC-95 Code:	TO-247
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	Matte Tin (Sn)
JESD-609 Code:	e3
Nominal Turn Off Time (toff):	247 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	360 W
Maximum Collector-Emitter Voltage:	650 V
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	113 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,497	-	-

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