STMicroelectronics - STGWA30N120KD

STGWA30N120KD by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STGWA30N120KD
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 60 A; Terminal Finish: Matte Tin (Sn);
Datasheet STGWA30N120KD Datasheet
In Stock4,129
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 60 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: Matte Tin (Sn)
Nominal Turn Off Time (toff): 756 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 220 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 57 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 125 Cel
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 25 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,129 - -

Popular Products

Category Top Products