STMicroelectronics - STGWT28IH120DF

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STGWT28IH120DF by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGWT28IH120DF
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 313 W; Maximum Collector Current (IC): 50 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet STGWT28IH120DF Datasheet
In Stock567
NAME DESCRIPTION
Maximum Collector Current (IC): 50 A
Maximum Power Dissipation (Abs): 313 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
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