STMicroelectronics - STGWT60H65F

  1. Home
  2. STMicroelectronics - STGWT60H65F
STGWT60H65F by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STGWT60H65F
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 360 W; Maximum Collector Current (IC): 120 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 650 V;
Datasheet STGWT60H65F Datasheet
In Stock720
NAME DESCRIPTION
Maximum Collector Current (IC): 120 A
Maximum Power Dissipation (Abs): 360 W
Maximum Collector-Emitter Voltage: 650 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
720 - -

Popular Products

Category Top Products

IRG4PC50FDPBF by Infineon Technologies

IRG4PC50FDPBF

Infineon Technologies

IRG4PC50FDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 200W. It has a single configuration with built-in diode, suitable for power control applications. With a nominal turn-off time of 660ns and max fall time of 210ns, it offers efficient switching performance in high-power systems.
FS450R17KE3 by Eupec & Kg

FS450R17KE3

Eupec & Kg

N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 605 A; No. of Terminals: 29; Terminal Position: UPPER;
APT150GN60JDQ4 by Microsemi

APT150GN60JDQ4

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 536 W; Maximum Collector Current (IC): 220 A; Terminal Form: UNSPECIFIED;
IRGR4045DPBF by Infineon Technologies

IRGR4045DPBF

Infineon Technologies

IRGR4045DPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Power Dissipation of 77W. It has a single configuration with built-in diode, ideal for power control applications requiring fast switching times (tr: 15ns, tf: 22ns). This surface-mount transistor operates at temperatures up to 175°C.
FS25R12YT3BOMA1 by Infineon Technologies

FS25R12YT3BOMA1

Infineon Technologies

Infineon Technologies' FS25R12YT3BOMA1 is an N-CHANNEL IGBT with 1200V max. collector-emitter voltage and 40A max. collector current. Featuring a complex configuration, it has 6 elements and a nominal turn-off time of 640ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.
HGTG11N120CND by Onsemi

HGTG11N120CND

Onsemi

HGTG11N120CND by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 43A. It has a nominal turn-off time of 570ns and a turn-on time of 33ns, making it ideal for motor control applications. The package style is flange mount with through-hole terminals in a rectangular shape.
APT100GN60LDQ4G by Microchip Technology

APT100GN60LDQ4G

Microchip Technology

Microchip Technology's APT100GN60LDQ4G is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 229A max collector current. Ideal for power control applications, it features a built-in diode, 96ns turn-on time, and 435ns turn-off time. Suitable for high-power systems requiring up to 625W dissipation in a flange mount package.
IXXH75N60C3 by IXYS Corporation

IXXH75N60C3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 150 A; Case Connection: COLLECTOR;
FGA25N120ANTDTU_NL by Fairchild Semiconductor

FGA25N120ANTDTU_NL

Fairchild Semiconductor

FGA25N120ANTDTU_NL by Fairchild Semiconductor is an N-CHANNEL IGBT with tr of 90 ns, tf of 180 ns, and Abs Pd of 312 W. It operates at a max Vce of 1200 V and can handle a max IC of 25 A. Ideal for high-power applications requiring fast switching speeds and high voltage capabilities.
IHW15N120E1XKSA1 by Infineon Technologies

IHW15N120E1XKSA1

Infineon Technologies

IHW15N120E1XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and a Max Collector Current of 30A. It is designed for POWER CONTROL applications, featuring a Nominal Turn Off Time of 1450ns. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals, making it suitable for various power control systems.
IKD04N60RFAATMA1 by Infineon Technologies

IKD04N60RFAATMA1

Infineon Technologies

IKD04N60RFAATMA1 by Infineon is an N-CHANNEL IGBT with 600V max. collector-emitter voltage and 8A max. collector current. It has a built-in diode, 216ns turn-off time, and is ideal for power control applications requiring fast switching speeds in automotive electronics (AEC-Q101 compliant).
APTGLQ100DA120T1G by Microchip Technology

APTGLQ100DA120T1G

Microchip Technology

Microchip Technology's APTGLQ100DA120T1G is an N-CHANNEL IGBT with 1200V VCEsat, 414ns toff, and 520W power dissipation. Ideal for MOTOR CONTROL applications due to its built-in diode and thermistor. Operating temperature range from -40°C to 175°C ensures reliable performance in various environments.
FP25R12KT3BOSA1 by Infineon Technologies

FP25R12KT3BOSA1

Infineon Technologies

FP25R12KT3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, ideal for POWER CONTROL applications. It features a max Collector-Emitter Voltage of 1200V, Nominal Turn Off Time of 610ns, and Max Collector Current of 40A. This RECTANGULAR package has 24 terminals and operates at a max temperature of 150°C.
IKP40N65F5XKSA1 by Infineon Technologies

IKP40N65F5XKSA1

Infineon Technologies

IKP40N65F5XKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for power control applications due to its fast turn-off time (toff) of 200ns and high collector-emitter voltage rating of 650V. Package style is flange mount with through-hole terminals.
AUIRGP4066D1-E by Infineon Technologies

AUIRGP4066D1-E

Infineon Technologies

AUIRGP4066D1-E by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 140A max collector current, and 454W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and fast switching times of 100ns rise and 80ns fall.
IXYP20N65C3D1 by IXYS Corporation

IXYP20N65C3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 50 A; No. of Terminals: 3;
HGTG40N60B3 by Harris Semiconductor

HGTG40N60B3

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Package Shape: RECTANGULAR;
IHW25N120E1XKSA1 by Infineon Technologies

IHW25N120E1XKSA1

Infineon Technologies

IHW25N120E1XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and collector current of 50A. It has a turn off time of 1677ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations.
IRFS7434TRL7PP by International Rectifier

IRFS7434TRL7PP

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 245 W; Maximum Drain Current (ID): 240 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
APT100GN60B2G by Advanced Power Technology

APT100GN60B2G

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 229 A; JESD-30 Code: R-PSIP-T3; Maximum Collector-Emitter Voltage: 600 V;