STMicroelectronics - STGWT60H65F

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STGWT60H65F by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGWT60H65F
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 360 W; Maximum Collector Current (IC): 120 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 650 V;
Datasheet STGWT60H65F Datasheet
In Stock720
NAME DESCRIPTION
Maximum Collector Current (IC): 120 A
Maximum Power Dissipation (Abs): 360 W
Maximum Collector-Emitter Voltage: 650 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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