STMicroelectronics - STGWT80V60DF

STGWT80V60DF by STMicroelectronics

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STGWT80V60DF
Description	N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet	STGWT80V60DF Datasheet
In Stock	3,282

STGWT80V60DF Technical Details

NAME	DESCRIPTION
Other Names:	STGWT80V60DF-ND 497-14563-5 -497-14563-5
Maximum Collector Current (IC):	120 A
Maximum Power Dissipation (Abs):	469 W
Maximum Collector-Emitter Voltage:	600 V
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Peak Reflow Temperature (C):	NOT SPECIFIED
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,282	$5.570	$18,280.740

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