STMicroelectronics - STGY50NB60HD

STGY50NB60HD by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGY50NB60HD
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 100 A; Maximum Gate-Emitter Threshold Voltage: 5 V;
Datasheet STGY50NB60HD Datasheet
In Stock3,767
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 100 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage: 5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 540 ns
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 250 W
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: SINGLE
Nominal Turn On Time (ton): 90 ns
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
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