STMicroelectronics - STH110N10F7-2

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STH110N10F7-2 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STH110N10F7-2
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (Abs) (ID): 110 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet STH110N10F7-2 Datasheet
In Stock420
NAME DESCRIPTION
Other Names: 497-13549-2
STH110N10F72
497-13549-1
-497-13549-6
497-13549-6
-497-13549-2
-497-13549-1
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 110 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Maximum Power Dissipation (Abs): 150 W
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (Abs) (ID): 110 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
420 $4.470 $1,877.400

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