STMicroelectronics - STH160N4LF6-2

  1. Home
  2. STMicroelectronics - STH160N4LF6-2
STH160N4LF6-2 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STH160N4LF6-2
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (ID): 120 A; No. of Elements: 1;
Datasheet STH160N4LF6-2 Datasheet
In Stock963
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 150 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 120 A
Maximum Drain Current (Abs) (ID): 120 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
963 $2.380 $2,291.940

Popular Products

Category Top Products

SIS413DN-T1-GE3 by Vishay Intertechnology

SIS413DN-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SIS413DN-T1-GE3 is a P-channel FET with 30V DS breakdown voltage, ideal for switching applications. Features include 70A max pulsed drain current, 0.0094 ohm max RDS(on), and 20mJ avalanche energy rating. Suitable for enhancement mode operation in small outline packages with drain case connection.
IRLML6346TRPBF by International Rectifier

IRLML6346TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
IRF7493TRPBF by International Rectifier

IRF7493TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Finish: MATTE TIN; No. of Elements: 1;
SI4946BEY-T1-GE3 by Vishay Siliconix

SI4946BEY-T1-GE3

Vishay Siliconix

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .041 ohm;
IRF3205ZSPBF by Infineon Technologies

IRF3205ZSPBF

Infineon Technologies

IRF3205ZSPBF by Infineon is an N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 440A and EAS of 180mJ, operating in ENHANCEMENT MODE. With a Drain Current of 75A and 0.0065 ohm On Resistance, it offers high power dissipation up to 170W in a SMALL OUTLINE package.
LTC4451AV#TRMPBF by Analog Devices

LTC4451AV#TRMPBF

Analog Devices

Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 4; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
AUIRFZ44NSTRR by International Rectifier

AUIRFZ44NSTRR

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; JESD-609 Code: e3; Terminal Position: SINGLE;
IRLML6246TRPBF by International Rectifier

IRLML6246TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Finish: MATTE TIN; No. of Elements: 1;
AUIRFR5305TRL by Infineon Technologies

AUIRFR5305TRL

Infineon Technologies

AUIRFR5305TRL by Infineon Technologies is a P-CHANNEL FET with 55V DS Breakdown Voltage and 110A IDM. Ideal for SWITCHING applications, it features a 0.065 ohm Drain-Source On Resistance and 280mJ Avalanche Energy Rating. Suitable for automotive use with AEC-Q101 standard compliance.
STN1NK80Z by STMicroelectronics

STN1NK80Z

STMicroelectronics

STN1NK80Z by STMicroelectronics is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It features 5A IDM, 16 ohm RDS(on), and 50mJ EAS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
IRFR4104TRPBF by Infineon Technologies

IRFR4104TRPBF

Infineon Technologies

IRFR4104TRPBF by Infineon Technologies is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 42A Drain Current. It is used for SWITCHING applications, featuring a built-in DIODE, 480A Pulsed Drain Current, and 145mJ Avalanche Energy Rating. Ideal for surface mount designs in power electronics.
JANTX2N6796U by International Rectifier Hirel Products

JANTX2N6796U

International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 100 V;
IRLML6401TRPBF by Infineon Technologies

IRLML6401TRPBF

Infineon Technologies

IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.
SUD50P04-09L-E3 by Vishay Intertechnology

SUD50P04-09L-E3

Vishay Intertechnology

Vishay Intertechnology's SUD50P04-09L-E3 is a P-channel Power FET with 40V DS breakdown voltage and 100A IDM. Ideal for applications requiring high power dissipation, such as automotive systems or industrial equipment due to its 136W max power dissipation and -55 to 175°C operating temperature range.
BSP230,135 by NXP Semiconductors

BSP230,135

NXP Semiconductors

NXP Semiconductors' BSP230,135 is a P-CHANNEL FET with 300V DS breakdown voltage. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With 0.75A max pulsed drain current and 17 ohm max drain-source resistance, this MOSFET can handle various power requirements efficiently.
IRLML6244TRPBF by International Rectifier

IRLML6244TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Drain Current (ID): 6.3 A; Package Shape: RECTANGULAR;
IRLML2502TRPBF by Infineon Technologies

IRLML2502TRPBF

Infineon Technologies

IRLML2502TRPBF by Infineon Technologies is a N-CHANNEL power FET with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 4.2A.
IRFZ44NPBF by International Rectifier

IRFZ44NPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; JESD-30 Code: R-PSFM-T3; Qualification: Not Qualified;
DMG2305UX-13 by Diodes Incorporated

DMG2305UX-13

Diodes Incorporated

DMG2305UX-13 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage and 4.2A max drain current, ideal for switching applications. It features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 1.4W. This MOSFET is surface mountable, with Gull Wing terminals and can withstand temperatures up to 150°C.
IRLML6401GTRPBF by Infineon Technologies

IRLML6401GTRPBF

Infineon Technologies

IRLML6401GTRPBF by Infineon is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 34A and EAS of 33mJ, suitable for high-power operations. With a small outline package style and GULL WING terminals, it operates in temperatures ranging from -55 to 150 °C.