STMicroelectronics - STI18N65M2

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STI18N65M2 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STI18N65M2
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Maximum Drain Current (ID): 12 A; No. of Elements: 1;
Datasheet STI18N65M2 Datasheet
In Stock4,397
NAME DESCRIPTION
Other Names: -1138-STI18N65M2
497-15550-5
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 12 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Power Dissipation (Abs): 110 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 12 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
4,397 $2.470 $10,860.590

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