STK2N80(SOT-194) by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STK2N80(SOT-194)
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: 7 ohm; Qualification: Not Qualified;
Datasheet	STK2N80(SOT-194) Datasheet
In Stock	4,209

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	107 ns
Maximum Drain Current (ID):	2.1 A
Maximum Pulsed Drain Current (IDM):	9.6 A
Surface Mount:	YES
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Power Dissipation Ambient:	70 W
Maximum Drain-Source On Resistance:	7 ohm
Avalanche Energy Rating (EAS):	80 mJ
Maximum Feedback Capacitance (Crss):	30 pF
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	800 V
Qualification:	Not Qualified

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,209	-	-

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