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Manufacturer | STMicroelectronics |
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Manufacturer's Part Number | STK7N10L(SOT-194) |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation Ambient: 45 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 7 A; |
Datasheet | STK7N10L(SOT-194) Datasheet |
In Stock | 1,029 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 7 A |
Maximum Pulsed Drain Current (IDM): | 28 A |
Surface Mount: | YES |
No. of Terminals: | 3 |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Maximum Power Dissipation Ambient: | 45 W |
Maximum Drain-Source On Resistance: | .45 ohm |
Avalanche Energy Rating (EAS): | 24 mJ |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 100 V |
Qualification: | Not Qualified |
Additional Features: | LOW THRESHOLD |