STMicroelectronics - STK9N10

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STK9N10 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STK9N10
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Avalanche Energy Rating (EAS): 30 mJ; Minimum DS Breakdown Voltage: 100 V;
Datasheet STK9N10 Datasheet
In Stock3,725
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 115 ns
Maximum Drain Current (ID): 9 A
Maximum Pulsed Drain Current (IDM): 36 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 50 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: 50 W
Maximum Drain-Source On Resistance: .3 ohm
Avalanche Energy Rating (EAS): 30 mJ
Maximum Feedback Capacitance (Crss): 100 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 9 A
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