STL3N65M2 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STL3N65M2
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 22 W; No. of Elements: 1; Maximum Pulsed Drain Current (IDM): 2.8 A;
Datasheet	STL3N65M2 Datasheet
In Stock	3,629

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.7 A
Maximum Pulsed Drain Current (IDM):	2.8 A
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	22 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Power Dissipation Ambient:	2 W
Maximum Drain-Source On Resistance:	1.8 ohm
Avalanche Energy Rating (EAS):	275 mJ
Other Names:	497-18738-6 497-18738-2 497-18738-1 STL3N65M2-ND
Maximum Feedback Capacitance (Crss):	.2 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	650 V
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,629	$0.304	$1,103.216

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CONNECTOR ACCESSORY; Contact Type: CRIMP REAR RELEASE; Mating Contacts: M39029/56-348, M39029/57-354; Insertion Tool Sources: MILITARY; Contact Gender: MALE; Alternate Contact Sources: MILITARY;

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