STL6N2VH5 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STL6N2VH5
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
Datasheet	STL6N2VH5 Datasheet
In Stock	769

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	6 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	6
Maximum Power Dissipation (Abs):	2.4 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N6
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.04 ohm
Other Names:	497-13777-6 -497-13777-2 -497-13777-1 -497-13777-6 497-13777-1 497-13777-2
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	20 V
Maximum Drain Current (Abs) (ID):	6 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
769	$0.101	$77.669

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