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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | STL6NM60N |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | STL6NM60N Datasheet |
| In Stock | 4,289 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 1 A |
| Maximum Pulsed Drain Current (IDM): | 23 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| No. of Terminals: | 12 |
| Maximum Power Dissipation (Abs): | 70 W |
| Terminal Position: | QUAD |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | S-XQCC-N12 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .92 ohm |
| Avalanche Energy Rating (EAS): | 65 mJ |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 600 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 5.7 A |
