STL6NM60N by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STL6NM60N
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	STL6NM60N Datasheet
In Stock	4,289

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1 A
Maximum Pulsed Drain Current (IDM):	23 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	12
Maximum Power Dissipation (Abs):	70 W
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	S-XQCC-N12
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.92 ohm
Avalanche Energy Rating (EAS):	65 mJ
Other Names:	497-7992-2 STL6NM60N-ND 497-7992-1 497-7992-6
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	5.7 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,289	-	-

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