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Manufacturer | STMicroelectronics |
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Manufacturer's Part Number | STL8N65M5 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Package Shape: SQUARE; Case Connection: DRAIN; |
Datasheet | STL8N65M5 Datasheet |
In Stock | 1,178 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 1.4 A |
Maximum Pulsed Drain Current (IDM): | 5.6 A |
Surface Mount: | YES |
No. of Terminals: | 5 |
Maximum Power Dissipation (Abs): | 70 W |
Terminal Position: | QUAD |
Package Style (Meter): | CHIP CARRIER |
JESD-30 Code: | S-XQCC-N5 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .6 ohm |
Avalanche Energy Rating (EAS): | 120 mJ |
Maximum Feedback Capacitance (Crss): | 2 pF |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 650 V |
Additional Features: | ULTRA-LOW RESISTANCE |
Peak Reflow Temperature (C): | NOT SPECIFIED |