STL8N65M5 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STL8N65M5
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Package Shape: SQUARE; Case Connection: DRAIN;
Datasheet	STL8N65M5 Datasheet
In Stock	2,377

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.4 A
Maximum Pulsed Drain Current (IDM):	5.6 A
Surface Mount:	YES
No. of Terminals:	5
Maximum Power Dissipation (Abs):	70 W
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	S-XQCC-N5
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.6 ohm
Avalanche Energy Rating (EAS):	120 mJ
Other Names:	-497-11850-1 497-11850-6 497-11850-2 -497-11850-2 497-11850-1
Maximum Feedback Capacitance (Crss):	2 pF
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	650 V
Additional Features:	ULTRA-LOW RESISTANCE
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,377	-	-

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