STMicroelectronics - STL8N65M5

STL8N65M5 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STL8N65M5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Package Shape: SQUARE; Case Connection: DRAIN;
Datasheet STL8N65M5 Datasheet
In Stock1,178
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.4 A
Maximum Pulsed Drain Current (IDM): 5.6 A
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 70 W
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
JESD-30 Code: S-XQCC-N5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .6 ohm
Avalanche Energy Rating (EAS): 120 mJ
Maximum Feedback Capacitance (Crss): 2 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 650 V
Additional Features: ULTRA-LOW RESISTANCE
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

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