STL92N10F7AG by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STL92N10F7AG
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;
Datasheet	STL92N10F7AG Datasheet
In Stock	3,387

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	16 A
Maximum Pulsed Drain Current (IDM):	64 A
Surface Mount:	YES
No. of Terminals:	5
Maximum Power Dissipation (Abs):	100 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0095 ohm
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,387	-	-

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V;