STMicroelectronics - STL9P2UH7

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STL9P2UH7 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STL9P2UH7
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.9 W; Minimum DS Breakdown Voltage: 20 V; Maximum Operating Temperature: 150 Cel;
Datasheet STL9P2UH7 Datasheet
In Stock2,297
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9 A
Maximum Pulsed Drain Current (IDM): 36 A
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 2.9 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .085 ohm
Maximum Feedback Capacitance (Crss): 188 pF
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 20 V
Maximum Drain Current (Abs) (ID): 9 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

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