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STL9P3LLH6 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STL9P3LLH6
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE;
Datasheet STL9P3LLH6 Datasheet
In Stock18,791
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9 A
Maximum Pulsed Drain Current (IDM): 36 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0225 ohm
Other Names: 497-17897-2
STL9P3LLH6-ND
497-17897-1
497-17897-6
Maximum Feedback Capacitance (Crss): 235 pF
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Peak Reflow Temperature (C): NOT SPECIFIED
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