STMicroelectronics - STLD125N4F6AG

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STLD125N4F6AG by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STLD125N4F6AG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet STLD125N4F6AG Datasheet
In Stock1,949
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 101 A
Maximum Pulsed Drain Current (IDM): 480 A
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 130 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .004 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 150 mJ
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,949 $2.710 $5,281.790

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