STMicroelectronics - STP12N50M2

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STP12N50M2 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STP12N50M2
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Maximum Drain Current (ID): 10 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet STP12N50M2 Datasheet
In Stock3,503
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 85 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 10 A
Maximum Drain Current (Abs) (ID): 10 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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Pricing (USD)

Qty. Unit Price Ext. Price
3,503 $1.610 $5,639.830

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