STMicroelectronics - STP13N65M2

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STP13N65M2 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STP13N65M2
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet STP13N65M2 Datasheet
In Stock804
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 110 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 10 A
Maximum Drain Current (Abs) (ID): 10 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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