STMicroelectronics - STP5N95K5

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STP5N95K5 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STP5N95K5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Case Connection: DRAIN; Maximum Feedback Capacitance (Crss): 1 pF;
Datasheet STP5N95K5 Datasheet
In Stock854
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 28 ns
Maximum Drain Current (ID): 3.5 A
Maximum Pulsed Drain Current (IDM): 14 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 70 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 57 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 2.5 ohm
Avalanche Energy Rating (EAS): 70 mJ
Maximum Feedback Capacitance (Crss): 1 pF
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 950 V
Additional Features: AVALANCHE ENERGY RATED
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
854 $0.375 $320.250

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