STQ2NK60ZR-AP by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STQ2NK60ZR-AP
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Pulsed Drain Current (IDM): 1.6 A; Maximum Drain Current (Abs) (ID): .4 A;
Datasheet	STQ2NK60ZR-AP Datasheet
In Stock	4,096

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.4 A
Maximum Pulsed Drain Current (IDM):	1.6 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	3 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	8 ohm
Avalanche Energy Rating (EAS):	90 mJ
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.4 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,096	$0.031	$126.976

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