STMicroelectronics - STRH100N10HYG

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STRH100N10HYG by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STRH100N10HYG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Turn On Time (ton): 87 ns; Maximum Feedback Capacitance (Crss): 284 pF;
Datasheet STRH100N10HYG Datasheet
In Stock841
NAME DESCRIPTION
Package Body Material: METAL
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 87 ns
Maximum Drain Current (ID): 48 A
Maximum Pulsed Drain Current (IDM): 192 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 170 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 169.4 ns
JESD-30 Code: S-MSFM-P3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .035 ohm
Avalanche Energy Rating (EAS): 954 mJ
Maximum Feedback Capacitance (Crss): 284 pF
JEDEC-95 Code: TO-254AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Reference Standard: EUROPEAN SPACE AGENCY; RH - 50K Rad(Si)
Peak Reflow Temperature (C): NOT SPECIFIED
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