STRH100N10HYT by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STRH100N10HYT
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Package Style (Meter): FLANGE MOUNT; JEDEC-95 Code: TO-254AA;
Datasheet	STRH100N10HYT Datasheet
In Stock	4,637

NAME	DESCRIPTION
Package Body Material:	METAL
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	87 ns
Maximum Drain Current (ID):	48 A
Maximum Pulsed Drain Current (IDM):	192 A
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	170 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	169.4 ns
JESD-30 Code:	S-MSFM-P3
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	PIN/PEG
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.035 ohm
Avalanche Energy Rating (EAS):	954 mJ
Maximum Feedback Capacitance (Crss):	284 pF
JEDEC-95 Code:	TO-254AA
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Reference Standard:	EUROPEAN SPACE AGENCY; RH - 50K Rad(Si)
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,637	-	-

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