STMicroelectronics - STRH40P10HYG

STRH40P10HYG by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STRH40P10HYG
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
Datasheet STRH40P10HYG Datasheet
In Stock2,194
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 76 ns
Maximum Drain Current (ID): 34 A
Maximum Pulsed Drain Current (IDM): 136 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 176 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 205 ns
JESD-30 Code: S-MSFM-P3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .075 ohm
Avalanche Energy Rating (EAS): 1133 mJ
Maximum Feedback Capacitance (Crss): 306 pF
JEDEC-95 Code: TO-254AA
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Reference Standard: EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)
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Pricing (USD)

Qty. Unit Price Ext. Price
2,194 $687.860 $1,509,164.840

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