STS10P4LLF6 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STS10P4LLF6
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Package Shape: RECTANGULAR; No. of Terminals: 8;
Datasheet	STS10P4LLF6 Datasheet
In Stock	1,847

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	10 A
Maximum Pulsed Drain Current (IDM):	40 A
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	2.7 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	2.7 W
Maximum Drain-Source On Resistance:	.015 ohm
Other Names:	-497-15483-2 497-15483-1 497-15483-2 -497-15483-6 497-15483-6 -497-15483-1
Maximum Feedback Capacitance (Crss):	238.5 pF
Polarity or Channel Type:	P-CHANNEL
Minimum DS Breakdown Voltage:	40 V
Maximum Drain Current (Abs) (ID):	10 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,847	-	-

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