Image shown is a representation only.
| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | STS10P4LLF6 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Package Shape: RECTANGULAR; No. of Terminals: 8; |
| Datasheet | STS10P4LLF6 Datasheet |
| In Stock | 1,847 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 10 A |
| Maximum Pulsed Drain Current (IDM): | 40 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 2.7 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | 2.7 W |
| Maximum Drain-Source On Resistance: | .015 ohm |
| Maximum Feedback Capacitance (Crss): | 238.5 pF |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum DS Breakdown Voltage: | 40 V |
| Maximum Drain Current (Abs) (ID): | 10 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
