STMicroelectronics - STS1HNC60

  1. Home
  2. STMicroelectronics - STS1HNC60
STS1HNC60 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STS1HNC60
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum DS Breakdown Voltage: 600 V; Package Shape: RECTANGULAR;
Datasheet STS1HNC60 Datasheet
In Stock1,882
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .36 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 600 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .36 A
Maximum Drain-Source On Resistance: 8 ohm
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,882 - -

Popular Products

Category Top Products

L2N7002WT1G by Leshan Radio

L2N7002WT1G

Leshan Radio

L2N7002WT1G by Leshan Radio is a N-CHANNEL FET with 0.115A max drain current and 0.3W max power dissipation. Ideal for small signal applications, it operates at up to 150°C, making it suitable for various electronic devices requiring efficient power management in compact designs.
BS170 by General Semiconductor

BS170

General Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Terminal Form: WIRE; Package Style (Meter): CYLINDRICAL;
MMBFJ112 by Onsemi

MMBFJ112

Onsemi

MMBFJ112 by Onsemi is a N-CHANNEL FET in PLASTIC/EPOXY package. It operates in DEPLETION MODE for SWITCHING applications with 50 ohm RDS(on) and 5 pF Crss. This SMALL OUTLINE transistor has a max temp of 150°C, making it suitable for various electronic devices.
IRLML2803TRPBF-1 by International Rectifier

IRLML2803TRPBF-1

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .25 ohm; JEDEC-95 Code: TO-236AB; JESD-30 Code: R-PDSO-G3;
NDS7002A by National Semiconductor

NDS7002A

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: R-PDSO-G3; Maximum Feedback Capacitance (Crss): 5 pF;
MMBF170Q-13-F by Diodes Incorporated

MMBF170Q-13-F

Diodes Incorporated

Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;
MMBF4117 by National Semiconductor

MMBF4117

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;
MMBF170Q-7-F by Diodes Incorporated

MMBF170Q-7-F

Diodes Incorporated

Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
NDS356AP by Fairchild Semiconductor

NDS356AP

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Position: DUAL; Maximum Time At Peak Reflow Temperature (s): 30;
BSS84 by Fairchild Semiconductor

BSS84

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;
FDN357N by Onsemi

FDN357N

Onsemi

FDN357N by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage and 1.9A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a low on-resistance of 0.06 ohm. The small outline package with gull wing terminals makes it suitable for surface mount designs at temperatures up to 150°C.
FDC640P by Fairchild Semiconductor

FDC640P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
FQT1N60CTF_WS by Fairchild Semiconductor

FQT1N60CTF_WS

Fairchild Semiconductor

FQT1N60CTF_WS by Fairchild Semiconductor is a small signal N-channel field effect transistor (FET) with a min DS breakdown voltage of 600V. It is commonly used for switching applications due to its single configuration with built-in diode and max drain current of 0.2A.
T2N7002BK,LM by Toshiba

T2N7002BK,LM

Toshiba

Toshiba T2N7002BK,LM is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with built-in diode and resistor. With 1W power dissipation and 1.75 ohm Drain-Source Resistance, it operates in ENHANCEMENT MODE for efficient performance.
BSS84P-E6327 by Infineon Technologies

BSS84P-E6327

Infineon Technologies

BSS84P-E6327 by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage, 0.17A max drain current, and 8 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.
FDY300NZ by Onsemi

FDY300NZ

Onsemi

FDY300NZ by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.6A Drain Current, and 0.7 ohm On Resistance. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package suitable for surface mount technology.
SI2308BDS-T1-E3 by Vishay Intertechnology

SI2308BDS-T1-E3

Vishay Intertechnology

SI2308BDS-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 2.3A Drain Current, and 0.156 ohm On Resistance. With an Operating Temperature range of -55 to 150 °C, it is ideal for small outline surface mount designs requiring high power dissipation.
2V7002LT1G by Onsemi

2V7002LT1G

Onsemi

2V7002LT1G by Onsemi is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V. It is commonly used for switching applications due to its single configuration with built-in diode and surface mount capability.
2N7002 by Lite-on Semiconductor

2N7002

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;
BS250P by Diodes Incorporated

BS250P

Diodes Incorporated

Diodes Inc.'s BS250P is a P-CHANNEL FET with 45V DS Breakdown Voltage and 0.23A Drain Current. Ideal for applications requiring low power dissipation, such as portable electronics. Features include ENHANCEMENT MODE operation, SILICON transistor element, and 150°C max operating temp.