STS26N3LLH6 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STS26N3LLH6
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G8;
Datasheet	STS26N3LLH6 Datasheet
In Stock	1,541

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	26 A
Maximum Pulsed Drain Current (IDM):	104 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	2.7 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.0053 ohm
Avalanche Energy Rating (EAS):	525 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	30 V
Additional Features:	ULTRA-LOW RESISTANCE
Maximum Drain Current (Abs) (ID):	26 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,541	-	-

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