STU2NK100Z by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STU2NK100Z
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Maximum Drain-Source On Resistance: 8.5 ohm; Maximum Drain Current (ID): 1.85 A;
Datasheet	STU2NK100Z Datasheet
In Stock	3,059

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	13.7 ns
Maximum Drain Current (ID):	1.85 A
Maximum Pulsed Drain Current (IDM):	7.4 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	3
Maximum Power Dissipation (Abs):	70 W
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
Maximum Turn Off Time (toff):	74 ns
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	8.5 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	170 mJ
Maximum Feedback Capacitance (Crss):	9 pF
JEDEC-95 Code:	TO-251AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	1000 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE ENERGY RATED
Maximum Drain Current (Abs) (ID):	1.85 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,059	$0.320	$978.880

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