STMicroelectronics - STV60NE06-16

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STV60NE06-16 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STV60NE06-16
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .016 ohm;
Datasheet STV60NE06-16 Datasheet
In Stock221
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 60 A
Maximum Pulsed Drain Current (IDM): 240 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 10
Maximum Power Dissipation (Abs): 150 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G10
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .016 ohm
Avalanche Energy Rating (EAS): 350 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
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