Image shown is a representation only.
| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | TSD250N05V |
| Description | Power Field-Effect Transistors; Maximum Power Dissipation (Abs): 500 W; Maximum Drain Current (ID): 250 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 250 A; Maximum Operating Temperature: 150 Cel; |
| Datasheet | TSD250N05V Datasheet |
| In Stock | 2,451 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | 500 W |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | 250 A |
| Maximum Drain Current (Abs) (ID): | 250 A |
| Sub-Category: | FET General Purpose Power |
