CDRH2D18/HPNP-1R7NC by Sumida | Inductors

Image shown is a representation only.

Manufacturer	Sumida
Manufacturer's Part Number	CDRH2D18/HPNP-1R7NC
Description	GENERAL PURPOSE INDUCTOR; Inductor Application: POWER INDUCTOR; No. of Terminals: 2; Package Style (Meter): SMT; Shielded: YES; Surface Mount: YES;
Datasheet	CDRH2D18/HPNP-1R7NC Datasheet

NAME	DESCRIPTION
Construction:	Rectangular
Shape or Size Description:	Rectangular Package
Case or Size Code:	1212
Packing Method:	Tape and Reel, 7 in
Tolerance:	30 %
Package Length:	0.118 in (3 mm)
Surface Mount:	Yes
Inductor Type:	General Purpose Inductor
Minimum Operating Temperature:	-40 °C (-40 °F)
Inductor Application:	Power Inductor
Maximum Rated Current:	2.2 A
Shielded:	Yes
Terminal Placement:	Dual Ended
No. of Functions:	1
No. of Terminals:	2
DC Resistance:	44 mΩ
Nominal Inductance (L):	1.7 μH
Package Style (Meter):	SMT
Core Material:	Ferrite
Terminal Shape:	Wraparound
Package Height:	0.071 in (1.8 mm)
Test Frequency:	100 kHz
Maximum Operating Temperature:	105 °C (221 °F)
Package Width:	0.118 in (3 mm)

Popular Products

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;

Yageo's RC0603JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. Its metal glaze/thick film technology and 0.1 W power dissipation make it ideal for jumper applications in various electronic devices.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.

N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;